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A Printed and Flexible Field‐Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material
Author(s) -
Schneider Jörg J.,
Hoffmann Rudolf C.,
Engstler Jörg,
Soffke Oliver,
Jaegermann Wolfram,
Issanin Alexander,
Klyszcz Andreas
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800819
Subject(s) - materials science , nanoscopic scale , semiconductor , field effect transistor , transistor , zinc , nanotechnology , thin film transistor , printed electronics , thin film , optoelectronics , polymer , inkwell , composite material , layer (electronics) , electrical engineering , metallurgy , engineering , voltage
A family of single‐source precursors for low temperature processing of uniform, transparent, and adherent ZnO thin films on various substrates is studied. They decompose cleanly under very mild processing conditions of 150 °C. The resulting ZnO thin films exhibit promising semiconducting properties when printed in a field‐effect transistor (FET) device structure. This class of precursor compounds is compatible with existing printing technologies and allows printing of semiconductors on flexible polymer substrates under mild conditions.