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π‐σ‐Phosphonic Acid Organic Monolayer/Sol–Gel Hafnium Oxide Hybrid Dielectrics for Low‐Voltage Organic Transistors
Author(s) -
Acton Orb,
Ting Guy,
Ma Hong,
Ka Jae Won,
Yip HinLap,
Tucker Neil M.,
Jen Alex K.Y.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800810
Subject(s) - materials science , pentacene , thin film transistor , monolayer , self assembled monolayer , transistor , hafnium , subthreshold slope , dielectric , alkyl , optoelectronics , threshold voltage , subthreshold conduction , oxide , chemical engineering , nanotechnology , voltage , layer (electronics) , organic chemistry , zirconium , electrical engineering , metallurgy , chemistry , engineering
Anthryl‐alkyl‐PA (π‐σ‐PA) self‐assembled monolayers (SAMs)/hafnium oxide (HfO 2 ) hybrid dielectrics have been integrated into organic thin film transistors (OTFTs) to achieve operating voltages under −1.5 V. Using π ‐ σ ‐PA SAMs on sol–gel processed HfO 2 , pentacene‐based OTFTs possess low subthreshold slopes (100 mV dec −1 ), high on–off current ratios (10 5 –10 6 ), and hole mobilities as high as 0.22 cm 2 V −1 s −1 .