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A Facile, Low‐Cost, and Scalable Method of Selective Etching of Semiconducting Single‐Walled Carbon Nanotubes by a Gas Reaction
Author(s) -
Zhang Hongliang,
Liu Yunqi,
Cao Lingchao,
Wei Dacheng,
Wang Yu,
Kajiura Hisashi,
Li Yongming,
Noda Kazuhiro,
Luo Guangfu,
Wang Lu,
Zhou Jing,
Lu Jing,
Gao Zhengxiang
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800703
Subject(s) - materials science , carbon nanotube , etching (microfabrication) , semiconductor , nanotechnology , chemical engineering , optoelectronics , layer (electronics) , engineering
A facile, scalable, and low‐cost gas‐treatment method for selectively etching semiconductor single‐walled carbon nanotubes (SWNTs) is developed. Using SO 3 gas as the etchant at a temperature of 400 °C, semiconductor SWNTs can be selectively and efficiently removed, and after this gas treatment samples enriched with metallic SWNTs can be obtained.