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Piezoelectric Effect on the Electronic Transport Characteristics of ZnO Nanowire Field‐Effect Transistors on Bent Flexible Substrates
Author(s) -
Kwon SoonShin,
Hong WoongKi,
Jo Gunho,
Maeng Jongsun,
Kim TaeWook,
Song Sunghoon,
Lee Takhee
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800691
Subject(s) - nanowire , materials science , bent molecular geometry , piezoelectricity , transistor , field effect transistor , bending , dielectric , optoelectronics , nanotechnology , composite material , electrical engineering , voltage , engineering
Inorganic field‐effect transistors are fabricated using ZnO and In 2 O 3 nanowires on flexible plastic substrates and their electronic characteristics are measured under different bending conditions. The electrical properties of bent nanowire flexible transistors can be understood by the piezoelectric effect and the electron trapping at the interfaces between the nanowire and the polymer dielectric.