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Carbon‐Nanotube‐Enabled Vertical Field Effect and Light‐Emitting Transistors
Author(s) -
Liu Bo,
McCarthy Mitchell A.,
Yoon Youngki,
Kim Do Young,
Wu Zhuangchun,
So Franky,
Holloway Paul H.,
Reynolds John R.,
Guo Jing,
Rinzler Andrew G.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800601
Subject(s) - materials science , field effect transistor , transistor , schottky barrier , carbon nanotube , semiconductor , optoelectronics , nanotechnology , carbon nanotube field effect transistor , electrical engineering , diode , engineering , voltage
In contrast to typical metals , carbon nanotubes are shown to form a unique Schottky barrier contact with semiconductors wherein a gate field can modulate not only the band bending in the semiconductor but also the height of the barrier. These phenomena are exploited to enable two new device architectures: a vertical field‐effect transistor (figure) and a vertical light‐emitting transistor.
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