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A High‐Efficiency Solution‐Deposited Thin‐Film Photovoltaic Device
Author(s) -
Mitzi David B.,
Yuan Min,
Liu Wei,
Kellock Andrew J.,
Chey S. Jay,
Deline Vaughn,
Schrott Alex G.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800555
Subject(s) - materials science , copper indium gallium selenide solar cells , thin film , photovoltaic system , energy conversion efficiency , optoelectronics , stoichiometry , deposition (geology) , thin film solar cell , grain size , nanotechnology , composite material , ecology , paleontology , chemistry , organic chemistry , sediment , biology
High‐quality Cu(In,Ga)Se 2 (CIGS) films are deposited from hydrazine‐based solutions and are employed as absorber layers in thin‐film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well‐formed grain structure without requiring post‐deposition high‐temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination).