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Elastic Properties and Buckling of Silicon Nanowires
Author(s) -
Hsin ChengLun,
Mai Wenjie,
Gu Yudong,
Gao Yifan,
Huang ChiTe,
Liu Yuzi,
Chen LihJuann,
Wang ZhongLin
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800485
Subject(s) - materials science , nanowire , silicon nanowires , buckling , scanning electron microscope , composite material , silicon , toughness , flexibility (engineering) , nanotechnology , optoelectronics , statistics , mathematics
The ultrahigh flexibility and strong mechanical toughness of silicon nanowires (SiNWs) is demonstrated using manipulation and measurements on buckled SiNWs in a scanning electron microscope (see figure). The experimental data and calculated results show that the nanowire can bear a large strain (1.5%), much more than the bulk material, while the elastic constant of the NW is similar to that of the bulk.