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Ga 2 Te 3 Sb 5 —A Candidate for Fast and Ultralong Retention Phase‐Change Memory
Author(s) -
Kao KinFu,
Lee ChainMing,
Chen MingJung,
Tsai MingJinn,
Chin TsungShune
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800423
Subject(s) - materials science , phase change memory , reset (finance) , data retention , phase (matter) , phase change , melting temperature , thermal , random access memory , optoelectronics , nanotechnology , chemical engineering , engineering physics , thermodynamics , composite material , computer science , physics , layer (electronics) , quantum mechanics , financial economics , computer hardware , engineering , economics
Incongruent melting phenomenon shows the feasibility of multilevel control using the phase‐change material Ga 2 Te 3 Sb 5 (Ga‐TS). Electrical results showed that Ga‐TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase‐change random‐access‐memory applications.