Ga 2 Te 3 Sb 5 —A Candidate for Fast and Ultralong Retention Phase‐Change Memory | Zendy

Kao KinFu | Zendy; Lee ChainMing | Zendy; Chen MingJung | Zendy; Tsai MingJinn | Zendy; Chin TsungShune | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Ga 2 Te 3 Sb 5 —A Candidate for Fast and Ultralong Retention Phase‐Change Memory

Author(s) -

Kao KinFu,

Lee ChainMing,

Chen MingJung,

Tsai MingJinn,

Chin TsungShune

Publication year - 2009

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200800423

Subject(s) - materials science , phase change memory , reset (finance) , data retention , phase (matter) , phase change , melting temperature , thermal , random access memory , optoelectronics , nanotechnology , chemical engineering , engineering physics , thermodynamics , composite material , computer science , physics , layer (electronics) , quantum mechanics , financial economics , computer hardware , engineering , economics

Incongruent melting phenomenon shows the feasibility of multilevel control using the phase‐change material Ga 2 Te 3 Sb 5 (Ga‐TS). Electrical results showed that Ga‐TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase‐change random‐access‐memory applications.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research