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Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer
Author(s) -
Lee JangSik,
Kim YongMu,
Kwon JeongHwa,
Shin Hyunjung,
Sohn ByeongHyeok,
Lee Jaegab
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800340
Subject(s) - materials science , trapping , nanoparticle , non volatile memory , nanotechnology , layer (electronics) , nanoscopic scale , trap (plumbing) , binary number , template , charge (physics) , cobalt , characterization (materials science) , optoelectronics , ecology , arithmetic , mathematics , environmental engineering , engineering , metallurgy , biology , physics , quantum mechanics
Tunable memory characteristics are investigated according to the metal‐nanoparticle species being used in memory devices. The memory devices are fabricated using diblock copolymer micelles as templates to synthesize nanoparticles of cobalt, gold, and a binary mixture thereof. Programmable memory characteristics show different charging/discharging behaviors according to the storage element configurations as confirmed by nanoscale device characterization.