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Silicon Surface‐Bound Redox‐Active Conjugated Wires Derived From Mono‐ and Dinuclear Iron(II) and Ruthenium(II) Oligo(phenyleneethynylene) Complexes
Author(s) -
Gauthier Nicolas,
Argouarch Gilles,
Paul Frédéric,
Humphrey Mark G.,
Toupet Loic,
AbabouGirard Soraya,
Sabbah Hussein,
Hapiot Philippe,
Fabre Bruno
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800324
Subject(s) - acetylide , redox , silicon , ruthenium , conjugated system , materials science , monolayer , ligand (biochemistry) , polymer chemistry , metal , photochemistry , nanotechnology , combinatorial chemistry , chemistry , catalysis , organic chemistry , polymer , receptor , optoelectronics , biochemistry , metallurgy , composite material
Electron‐rich mononuclear Fe(II) or dinuclear Fe(II)/Ru(II) acetylide complexes are photochemically grafted onto hydrogenated silicon surfaces following a simple and mild one‐step procedure. The monolayers of redox‐active organometallics that are formed exhibit efficient electrical communication between their bound metallic centers and the silicon surface through interfacial SiC bonds.

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