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Band‐like Transport in Surface‐Functionalized Highly Solution‐Processable Graphene Nanosheets
Author(s) -
Wang Shuai,
Chia PerqJon,
Chua LayLay,
Zhao LiHong,
Png RuiQi,
Sivaramakrishnan Sankaran,
Zhou Mi,
Goh Roland G.S.,
Friend Richard H.,
Wee Andrew T.S.,
Ho Peter K.H.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200800279
Subject(s) - materials science , graphene , surface modification , exfoliation joint , oxide , electron mobility , graphite , band gap , nanotechnology , electron transport chain , transistor , electron , field effect transistor , optoelectronics , chemical engineering , voltage , composite material , biology , botany , physics , quantum mechanics , engineering , metallurgy
Surface‐functionalised graphene oxide nanosheets are obtained from substoichiometric oxidation of graphite, exfoliation, and in situ functionalization. Subsequent deoxidation produces zero‐gap imperfect graphenites with carrier mobilities of 10 cm 2 V −1 s −1 . These nanosheets exhibit trap‐free band‐like transport with sub‐meV carrier mobility activation energies at low temperatures for electrons and holes. Field‐effect transistors with zero gate‐voltage threshold have been demonstrated.