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Cover Picture: Influence of Plasma Stimulation on Si Nanowire Nucleation and Orientation Dependence (Adv. Mater. 18/2007)
Author(s) -
Aella P.,
Ingole S.,
Petuskey W. T.,
Picraux S. T.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200790069
Subject(s) - nucleation , nanowire , materials science , plasma , excitation , nanotechnology , chemical physics , thermodynamics , chemistry , physics , engineering , quantum mechanics , electrical engineering
On p. 2603, Tom Picraux and co‐workers report on the use of plasma excitation to strongly enhance the nucleation of Si nanowires by the vapor–liquid–solid growth method. This control allows the preferential formation of very small diameter [110] oriented nanowires, as well as significant enhancements in low temperature nanowire growth.