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Cover Picture: Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self‐Assembled Organic Coatings (Adv. Mater. 14/2007)
Author(s) -
Mårtensson T.,
Wagner J. B.,
Hilner E.,
Mikkelsen A.,
Thelander C.,
Stangl J.,
Ohlsson B. J.,
Gustafsson A.,
Lundgren E.,
Samuelson L.,
Seifert W.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200790053
Subject(s) - nanowire , materials science , nucleation , indium arsenide , epitaxy , template , substrate (aquarium) , nanotechnology , indium , transmission electron microscopy , silicon , arsenide , optoelectronics , gallium arsenide , layer (electronics) , quantum dot , organic chemistry , geology , chemistry , oceanography
On p. 1801, Lars Samuelson and co‐workers report on InAs nanowires that are grown directly on Si substrates by employing self‐assembled organic coatings to create an oxide template which guides nanowire nucleation. The nanowires extend vertically from the Si(111) substrate (foreground). No metal catalysts are used, and the InAs crystal extends to the nanowire tip as shown in the atomically resolved transmission electron microscopy image (dome background). The reported method constitutes a promising approach to the integration of new components into existing Si technology.