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A Doping‐Free Carbon Nanotube CMOS Inverter‐Based Bipolar Diode and Ambipolar Transistor
Author(s) -
Wang Sheng,
Zhang Zhiyong,
Ding Li,
Liang Xuelei,
Shen Jun,
Xu Huilong,
Chen Qing,
Cui RongLi,
Li Yan,
Peng LianMao
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200703210
Subject(s) - ambipolar diffusion , inverter , materials science , cmos , diode , carbon nanotube , doping , optoelectronics , bipolar junction transistor , transistor , nanotechnology , field effect transistor , electrical engineering , electron , voltage , physics , engineering , quantum mechanics
A barrier‐free bipolar diode (BFBD) and an ambipolar field‐effect transistor (FET) are fabricated based on a doping‐free carbon nanotube (CNT) CMOS inverter. The basic CNT device unit consists of two Pd and two Sc electrodes deposited side‐by‐side on a single CNT, and can be used as an n‐FET, p‐FET, CMOS inverter, and high‐performance ambipolar FET and BFBD in which both electrons and holes contribute effectively to the forward current.