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Reversible Modulation of Conductance in Silicon Devices via UV/Visible‐Light Irradiation
Author(s) -
He Tao,
Lu Meng,
Yao Jun,
He Jianli,
Chen Bo,
Di Spigeil Halen,
Nackashi David P.,
Franzon Paul D.,
Tour James M.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200703084
Subject(s) - materials science , silicon , conductance , monolayer , optoelectronics , redistribution (election) , visible spectrum , irradiation , molecule , modulation (music) , photochemistry , nanotechnology , philosophy , chemistry , physics , mathematics , organic chemistry , combinatorics , politics , political science , nuclear physics , law , aesthetics
Silicon devices bearing grafted molecular monolayers have their conductance reversibly modulated. By alternately illuminating the samples with visible and near‐UV light, threshold‐voltage shifts occur to the negative and positive directions, respectively. This corresponds to charge transfer/redistribution between the silicon device and the grafted molecules.