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Grain‐Boundary Evolution in a Pentacene Monolayer
Author(s) -
Zhang Jian,
Rabe Jürgen P.,
Koch Norbert
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200703066
Subject(s) - pentacene , grain boundary , materials science , monolayer , chemical physics , condensed matter physics , nanotechnology , thin film transistor , microstructure , composite material , layer (electronics) , chemistry , physics
Grain boundaries within single pentacene topographical islands on SiO 2 are directly observed (see figure), and these intraisland grain boundaries form at very early stages of pentacene film growth (starting at ca. 0.05 monolayer). Consequently, charge‐carrier mobility values from studies on single topographical islands may still include contributions from grain boundaries.