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Morphological Control of Single‐Crystalline Silicon Nanowire Arrays near Room Temperature
Author(s) -
Chen ChiaYun,
Wu ChiSheng,
Chou ChiaJen,
Yen TaJen
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200702788
Subject(s) - materials science , nanotechnology , nanowire , orientation (vector space) , silicon , silicon nanowires , taguchi methods , scale (ratio) , deposition (geology) , optoelectronics , composite material , paleontology , geometry , mathematics , sediment , biology , physics , quantum mechanics
Control of the orientation, diameter, and length of silicon nanowires (SiNWs) is achieved in large‐scale single‐crystalline SiNW arrays fabricated by a statistical electroless metal deposition technique. Taguchi methods are employed to optimize the diameter control and to understand the influence of all processing factors on the growth. The 〈100〉 directions are found to be the preferred crystallographic orientation of the growing SiNWs (see figure).