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High‐Performance Thin‐Film Transistors from Solution‐Processed Cadmium Selenide and a Self‐Assembled Multilayer Gate Dielectric
Author(s) -
Byrne Paul D.,
Facchetti Antonio,
Marks Tobin J.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200702677
Subject(s) - materials science , cadmium selenide , thin film transistor , optoelectronics , dielectric , gate dielectric , transistor , thin film , nanotechnology , electrical engineering , quantum dot , layer (electronics) , engineering , voltage
TFTs based on solution‐processed CdSe films as the semiconductor and a solution‐processed nanoscopic self‐assembled gate dielectric are fabricated. The devices exhibit high electron mobilities at low operating voltages.