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Direct Observation of Inversion Domain Boundaries of GaN on c ‐Sapphire at Sub‐ångstrom Resolution
Author(s) -
Liu Fude,
Collazo Ramon,
Mita Seiji,
Sitar Zlatko,
Pennycook Stephen J.,
Duscher Gerd
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200702522
Subject(s) - materials science , sapphire , inversion (geology) , polarity (international relations) , resolution (logic) , projection (relational algebra) , high resolution , optoelectronics , optics , physics , laser , computer science , algorithm , artificial intelligence , chemistry , remote sensing , biology , paleontology , biochemistry , structural basin , cell , geology
Inversion domain boundaries (IDBs) of GaN are studied by a high‐resolution technique. The IDB separates adjacent domains of opposite polarity. The image shows a GaN IDB in the [bar;2110] projection. The theoretical IDB structure fits the experimentally obtained structure well. The inset is an image acquired from a very thin region on the right side of the IDB. It can indicate the polarity of GaN directly.