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Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa 2 O 4 Nanotubes
Author(s) -
Gautam U. K.,
Bando Y.,
Zhan J.,
Costa P. M. F. J.,
Fang X. S.,
Golberg D.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701761
Subject(s) - materials science , nanowire , doping , heterojunction , nanotechnology , phosphor , fabrication , template , nanotube , chemical engineering , carbon nanotube , optoelectronics , medicine , alternative medicine , pathology , engineering
Ga‐doped ZnS nanowires are used as precursors for the preparation of ZnO/ZnGa 2 O 4 composite nanotubes, as shown in the figure. Oxidation of the nanowires induces phase separation resulting in the formation of ZnO/ZnGa 2 O 4 phosphor heterostructures. The nanowires essentially serve as both precursors and templates for the fabrication of the nanotubes.