Design of Gallium Nitride Resonant Cavity Light‐Emitting Diodes on Si Substrates | Zendy

Mastro M. A. | Zendy; Caldwell J. D. | Zendy; Holm R. T. | Zendy; Henry R. L. | Zendy; Eddy C. R. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Design of Gallium Nitride Resonant Cavity Light‐Emitting Diodes on Si Substrates

Author(s) -

Mastro M. A.,

Caldwell J. D.,

Holm R. T.,

Henry R. L.,

Eddy C. R.

Publication year - 2008

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200701683

Subject(s) - materials science , optoelectronics , light emitting diode , gallium nitride , diode , electroluminescence , distributed bragg reflector , resonant cavity , substrate (aquarium) , silicon , nitride , optics , layer (electronics) , nanotechnology , laser , wavelength , oceanography , physics , geology

A GaN resonant cavity light emitting diode was built on a GaN/AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a semi‐transparent metal contact design, and up to eight times for a flip‐chip design.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research