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Design of Gallium Nitride Resonant Cavity Light‐Emitting Diodes on Si Substrates
Author(s) -
Mastro M. A.,
Caldwell J. D.,
Holm R. T.,
Henry R. L.,
Eddy C. R.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701683
Subject(s) - materials science , optoelectronics , light emitting diode , gallium nitride , diode , electroluminescence , distributed bragg reflector , resonant cavity , substrate (aquarium) , silicon , nitride , optics , layer (electronics) , nanotechnology , laser , wavelength , oceanography , physics , geology
A GaN resonant cavity light emitting diode was built on a GaN/AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a semi‐transparent metal contact design, and up to eight times for a flip‐chip design.