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Residual Layer Self‐Removal in Imprint Lithography
Author(s) -
Dumond Jarrett,
Low Hong Yee
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701659
Subject(s) - materials science , lithography , residual , layer (electronics) , polymer , nanotechnology , composite material , plasma etching , optoelectronics , etching (microfabrication) , algorithm , computer science
A new method for imprinting residual‐layer free polymer micro‐ and nano structures , particularly 3‐D structures with overhang, is demonstrated. This simple and versatile method induces self‐removal of the residual layer by controlled failure of the patterned film along the edges of the imprinted features. Pristine overhang structures down to ∼500 nm diameter are realized without exposure to plasma or chemical etchants.