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LiF as an n‐Dopant in Tris(8‐hydroxyquinoline) Aluminum Thin Films
Author(s) -
Choudhury Kaushik Roy,
Yoon Jonghyuk,
So Franky
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701657
Subject(s) - materials science , dopant , doping , work function , aluminium , cathode , conductivity , 8 hydroxyquinoline , optoelectronics , charge carrier , evaporation , layer (electronics) , thin film , electron mobility , chemical engineering , analytical chemistry (journal) , nanotechnology , inorganic chemistry , composite material , chemistry , organic chemistry , physics , engineering , thermodynamics
Facile non‐alkaline n‐doping of Alq 3 with LiF is achieved by co‐evaporation. Optimal doping not only leads to enhanced device currents and conductivity, but also changes the very nature of carrier injection and transport. Using this scheme, efficient electron injection is achieved without using low‐work‐function cathodes. A doped transport layer (see figure) inOL EDs leads to balanced injection andtransport of charge carriers and resultsin excellent device performance.