Premium
Mobile Ionic Impurities in Poly(vinyl alcohol) Gate Dielectric: Possible Source of the Hysteresis in Organic Field‐Effect Transistors
Author(s) -
Egginger M.,
IrimiaVladu M.,
Schwödiauer R.,
Tanda A.,
Frischauf I.,
Bauer S.,
Sariciftci N. S.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701479
Subject(s) - materials science , impurity , vinyl alcohol , dielectric , gate dielectric , transistor , field effect transistor , hysteresis , optoelectronics , ionic bonding , thin film transistor , alcohol , polymer , voltage , nanotechnology , ion , organic chemistry , electrical engineering , condensed matter physics , chemistry , composite material , physics , layer (electronics) , engineering
Ionic impurities in gate dielectrics are outlined as a possible source for threshold voltage shifts in organic field effect transistors. Using poly(vinyl alcohol) containing sodium acetate impurities we show how transistors can be designed for memory elements or polymer integrated circuits.