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Organic Field‐Effect Transistors with a Low Pinch‐Off Voltage and a Controllable Threshold Voltage
Author(s) -
Wang Y.,
Liu Y. Q.,
Song Y. B.,
Ye S. H.,
Wu W. P.,
Guo Y. L.,
Di C. A.,
Sun Y. M.,
Yu G.,
Hu W. P.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701476
Subject(s) - threshold voltage , materials science , transistor , voltage , optoelectronics , layer (electronics) , field effect transistor , organic semiconductor , pinch , nanotechnology , electrical engineering , physics , quantum mechanics , engineering
Organic field‐effect transistors with a poly( N ‐vinylcarbazole) (PVK) buffer layer between the SiO 2 and organic semiconductor are fabricated. The PVK layer improves the device performance (mobility of 0.5 cm 2 V –1 s –1 ). The charge stored in the PVK layer can be changed by the starting V GS (see figure, where V GS varies from 0 to –100 V), resulting in the systematic control of the threshold voltage in a device.