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Tunable n‐Type Conductivity and Transport Properties of Ga‐doped ZnO Nanowire Arrays
Author(s) -
Yuan G.D.,
Zhang W.J.,
Jie J.S.,
Fan X.,
Tang J.X.,
Shafiq I.,
Ye Z.Z.,
Lee C.S.,
Lee S.T.
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701377
Subject(s) - materials science , dopant , nanowire , doping , electrical resistivity and conductivity , conductivity , impurity , evaporation , nanotechnology , thermal conductivity , optoelectronics , composite material , chemistry , physics , engineering , organic chemistry , electrical engineering , thermodynamics
Well‐aligned ZnO nanowires (NWs) with tunable n‐type conductivity are synthesized by introducing Ga 2 O 3 as a dopant source in thermal evaporation. The crystallographic orientation of the NWs depends on the dopant content. Electrical transport property measurements on single nanowires verify that the resistivity of ZnO NWs can be controlled, with high reproducibility, by the Ga impurities.