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High‐Performance Field‐Effect Transistor Based on Dibenzo[ d , d ′]thieno[3,2‐ b ;4,5‐ b ′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential
Author(s) -
Gao J. H.,
Li R. J.,
Li L. Q.,
Meng Q.,
Jiang H.,
Li H. X.,
Hu W. P.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701167
Subject(s) - pentacene , materials science , ionization , substrate (aquarium) , organic semiconductor , semiconductor , transistor , organic electronics , optoelectronics , field effect transistor , electronics , simple (philosophy) , ionization energy , nanotechnology , thin film transistor , organic chemistry , chemistry , electrical engineering , philosophy , oceanography , engineering , layer (electronics) , epistemology , geology , ion , voltage
Three simple, controlled steps are all it takes to synthesize the title pentacene analogue DBTDT (see figure). The material's high ionization potential, high thermal and photostability, high mobilities, and an on/off ratio larger than 10 6 at a substrate temperature of ca. 36 °C, as reported here, suggest that DBTDT will be extremely valuable for applications in plastic organic electronics.