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Controlling Oxidation States in Uranium Oxides through Epitaxial Stabilization
Author(s) -
Burrell A. K.,
McCleskey T. M.,
Shukla P.,
Wang H.,
Durakiewicz T.,
Moore D. P.,
Olson C. G.,
Joyce J. J.,
Jia Q.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701157
Subject(s) - epitaxy , uranium , materials science , lattice (music) , crystal growth , oxide , uranium oxide , crystal structure , chemical engineering , inorganic chemistry , crystallography , nanotechnology , metallurgy , chemistry , layer (electronics) , engineering , physics , acoustics
We have demonstrated that oxidation states in uranium‐oxides such as UO 2 and U 3 O 8 can be controlled through epitaxial stabilization by growing single‐crystal‐like films. We have further shown that the growth of polymorphic uranium oxides is feasible by using different substrates with appropriate in‐plane lattice parameters. The clearly improved stability of epitaxial uranium‐oxides illustrates the significance of crystal lattice pinning on the control of surface chemistry of materials.