Al‐Doped TiO 2  Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors | Zendy

Kim Seong Keun | Zendy; Choi GyuJin | Zendy; Lee Sang Young | Zendy; Seo Minha | Zendy; Lee Sang Woon | Zendy; Han Jeong Hwan | Zendy; Ahn HyoShin | Zendy; Han Seungwu | Zendy; Hwang Cheol Seong | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Al‐Doped TiO 2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

Author(s) -

Kim Seong Keun,

Choi GyuJin,

Lee Sang Young,

Seo Minha,

Lee Sang Woon,

Han Jeong Hwan,

Ahn HyoShin,

Han Seungwu,

Hwang Cheol Seong

Publication year - 2008

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200701085

Subject(s) - dram , capacitor , materials science , capacitance , dielectric , leakage (economics) , optoelectronics , stack (abstract data type) , doping , transistor , electrical engineering , nanotechnology , high κ dielectric , computer science , voltage , electrode , physics , engineering , operating system , quantum mechanics , economics , macroeconomics

Al‐doped TiO 2 thin films to be used in future DRAM capacitors with excellent leakage properties as well as high dielectric constants are fabricated. The next generation stack structured DRAM cell composed of a transistor and a capacitor is shown (see Figure). A large cell capacitance is required for successful operation of DRAMs irrespective of the feature size of the cell. Therefore, as scaling down of the DRAMs proceeds, a higher‐ k material such as Al‐doped TiO 2 has to be eventually implemented in the capacitor.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research