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Al‐Doped TiO 2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
Author(s) -
Kim Seong Keun,
Choi GyuJin,
Lee Sang Young,
Seo Minha,
Lee Sang Woon,
Han Jeong Hwan,
Ahn HyoShin,
Han Seungwu,
Hwang Cheol Seong
Publication year - 2008
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701085
Subject(s) - dram , capacitor , materials science , capacitance , dielectric , leakage (economics) , optoelectronics , stack (abstract data type) , doping , transistor , electrical engineering , nanotechnology , high κ dielectric , computer science , voltage , electrode , physics , engineering , operating system , quantum mechanics , economics , macroeconomics
Al‐doped TiO 2 thin films to be used in future DRAM capacitors with excellent leakage properties as well as high dielectric constants are fabricated. The next generation stack structured DRAM cell composed of a transistor and a capacitor is shown (see Figure). A large cell capacitance is required for successful operation of DRAMs irrespective of the feature size of the cell. Therefore, as scaling down of the DRAMs proceeds, a higher‐ k material such as Al‐doped TiO 2 has to be eventually implemented in the capacitor.