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Rubrene/Fullerene Heterostructures with a Half‐Gap Electroluminescence Threshold and Large Photovoltage
Author(s) -
Pandey A. K.,
Nunzi J.M.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200701052
Subject(s) - rubrene , electroluminescence , materials science , optoelectronics , heterojunction , voltage , electrical engineering , nanotechnology , engineering , layer (electronics)
Light and current generation functions from a rubrene/fullerene heterostructure are integrated into an efficient organic dual device (see figure). Electroluminescence, with the characteristic rubrene color, has a turn‐on voltage less than 1 V. Solar‐power conversion efficiency reaches 3 % with a 5.3 mA cm –2 short‐circuit current density and almost 1 V open‐ circuit voltage under AM 1.5 illumination. The half‐bandgap electroluminescence turn‐on voltage is interpreted as an Auger fountain effect.