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Nanoscale Electrolytic Switching in Phase‐Change Chalcogenide Films
Author(s) -
Pandian R.,
Kooi B. J.,
Palasantzas G.,
De Hosson J. T. M.,
Pauza A.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700904
Subject(s) - materials science , amorphous solid , chalcogenide , polarity (international relations) , nanoscopic scale , nanometre , phase (matter) , phase change , nanotechnology , current (fluid) , optoelectronics , engineering physics , crystallography , composite material , electrical engineering , chemistry , genetics , organic chemistry , biology , engineering , cell
Reversible polarity‐dependent resistance (PDR) switching in phase‐change (PC) films is feasible. Nanometer‐scale crystalline marks are produced in amorphous Ge 2 Sb 2+ x Te 5 films by electrical pulses through an AFM tip. In these marks, PDR switching is demonstrated with three orders of magnitude current contrast using less than 1.5 V. No current contrast between the crystalline marks in the high‐ resistance state and the amorphous background is observed.