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Low‐Voltage Organic Thin‐Film Transistors with High‐ k Nanocomposite Gate Dielectrics for Flexible Electronics and Optothermal Sensors
Author(s) -
Zirkl M.,
Haase A.,
Fian A.,
Schön H.,
Sommer C.,
Jakopic G.,
Leising G.,
Stadlober B.,
Graz I.,
Gaar N.,
Schwödiauer R.,
BauerGogonea S.,
Bauer S.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700831
Subject(s) - materials science , microelectronics , organic electronics , transistor , optoelectronics , electronics , nanocomposite , dielectric , gate dielectric , thin film transistor , flexible electronics , silicon , high κ dielectric , nanotechnology , field effect transistor , voltage , electrical engineering , layer (electronics) , engineering
Organic field effect transistors with a nanocomposite gate of ZrO 2 and poly(α‐methyl styrene) (see figure, left) show performances close to the theoretically possible limit, with interface trap densities comparing favorably with the current state of the art in silicon microelectronics. They are not only key elements in flexible electronics, but also in low‐cost, high‐end sensors, as demonstrated with optothermal sensing elements (see figure, right).