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Optical and Structural Properties of Single Phase Epitaxial p‐Type Transparent Oxide Thin Films
Author(s) -
Luo H.,
Jain M.,
McCleskey T. M.,
Bauer E.,
Burrell A. K.,
Jia Q.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700528
Subject(s) - materials science , sapphire , electrical resistivity and conductivity , epitaxy , annealing (glass) , thin film , optoelectronics , transmittance , resistive touchscreen , band gap , oxide , optics , nanotechnology , composite material , laser , layer (electronics) , metallurgy , physics , electrical engineering , engineering
Single phase, epitaxial, transparent, and p‐type CuAlO 2 films are successfully grown on c‐plane sapphire by polymer‐assisted deposition. At wavelengths in the range of 400–1000 nm, the optical transmittance of the films is 60–80 %. The energy band gap is 3.6 eV. The as‐synthesized CuAlO 2 films are highly resistive, with room‐temperature resistivity around 10 5 Ω cm. The resistivity can be reduced to 10 3 –10 4 Ω cm by post‐annealing films in oxygen.