Optical and Structural Properties of Single Phase Epitaxial p‐Type Transparent Oxide Thin Films | Zendy

Luo H. | Zendy; Jain M. | Zendy; McCleskey T. M. | Zendy; Bauer E. | Zendy; Burrell A. K. | Zendy; Jia Q. | Zendy

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Optical and Structural Properties of Single Phase Epitaxial p‐Type Transparent Oxide Thin Films

Author(s) -

Luo H.,

Jain M.,

McCleskey T. M.,

Bauer E.,

Burrell A. K.,

Jia Q.

Publication year - 2007

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200700528

Subject(s) - materials science , sapphire , electrical resistivity and conductivity , epitaxy , annealing (glass) , thin film , optoelectronics , transmittance , resistive touchscreen , band gap , oxide , optics , nanotechnology , composite material , laser , layer (electronics) , metallurgy , physics , electrical engineering , engineering

Single phase, epitaxial, transparent, and p‐type CuAlO 2 films are successfully grown on c‐plane sapphire by polymer‐assisted deposition. At wavelengths in the range of 400–1000 nm, the optical transmittance of the films is 60–80 %. The energy band gap is 3.6 eV. The as‐synthesized CuAlO 2 films are highly resistive, with room‐temperature resistivity around 10 5 Ω cm. The resistivity can be reduced to 10 3 –10 4 Ω cm by post‐annealing films in oxygen.

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