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Cathodic and Anodic Material Diffusion in Polymer/Semiconductor‐Nanocrystal Composite Devices
Author(s) -
Gallardo D. E.,
Bertoni C.,
Dunn S.,
Gaponik N.,
Eychmüller A.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700394
Subject(s) - materials science , anode , cathode , diffusion , nanocrystal , aluminium , composite number , cathodic protection , polymer , electrode , semiconductor , oxide , nanotechnology , composite material , optoelectronics , metallurgy , chemistry , physics , thermodynamics
Electrode material diffusion in polymer/nanoparticle composite devices has been detected after the application of high electric fields (10 7 V m –1 ). Composition depth profiles obtained with SIMS show diffusion of material from both the aluminium cathode and the ITO anode. This diffusion can cause device failure even in low current regimes. The growth of the aluminium oxide is explained in terms of the Mott model.