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Flexible Inorganic/Organic Hybrid Thin‐Film Transistors Using All‐Transparent Component Materials
Author(s) -
Wang L.,
Yoon M.H.,
Facchetti A.,
Marks T J.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700393
Subject(s) - materials science , thin film transistor , optoelectronics , dielectric , flexibility (engineering) , transistor , transparency (behavior) , polymer , organic semiconductor , organic field effect transistor , gate dielectric , thin film , hybrid material , field effect transistor , nanotechnology , layer (electronics) , composite material , electrical engineering , computer science , statistics , mathematics , engineering , voltage , computer security
Inorganic‐organic hybrid TFTs have been fabricated at room temperature using IAD‐derived high‐quality semiconducting In 2 O 3 and a crosslinked spin‐coatable polymer gate dielectric. TFTs exhibiting field‐effect mobilities up to 160 cm 2 V –1 s –1 , on Si and 10 cm 2 V –1 s –1 on PET substrates have been demonstrated. TFTs on PET combine good transport characteristics as well as optical transparency and flexibility.