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High‐Yield Synthesis of Rhombohedral Boron Nitride Triangular Nanoplates
Author(s) -
Xu L. Q.,
Zhan J. H.,
Hu J. Q.,
Bando Y.,
Yuan X. L.,
Sekiguchi T.,
Mitome M.,
Golberg D.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700366
Subject(s) - materials science , trigonal crystal system , boron nitride , yield (engineering) , nanotechnology , nitride , band gap , boron , optoelectronics , crystallography , crystal structure , metallurgy , layer (electronics) , chemistry , organic chemistry
Unique, highly crystalline, triangular BN nanoplates (see figure) with a wide bandgap—which will ease their integration into nanoelectronic and photonic devices—are reported to be synthesized by reaction of NH 4 BF 4 and NaNH 2 with the assistance of metallic Ni. A thorough analysis of the morphological and structural characteristics of the nanoplates is presented.