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Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self‐Assembled Organic Coatings
Author(s) -
Mårtensson T.,
Wagner J. B.,
Hilner E.,
Mikkelsen A.,
Thelander C.,
Stangl J.,
Ohlsson B. J.,
Gustafsson A.,
Lundgren E.,
Samuelson L.,
Seifert W.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700285
Subject(s) - materials science , indium arsenide , nanowire , template , nanoelectronics , indium , nanotechnology , nucleation , arsenide , epitaxy , silicon , indium tin oxide , nanolithography , gallium arsenide , optoelectronics , quantum dot , layer (electronics) , fabrication , medicine , chemistry , alternative medicine , organic chemistry , pathology
Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self‐assembled organic coatings to create oxide‐based growth templates. High‐performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.