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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
Author(s) -
Lee M.J.,
Park Y.,
Suh D.S.,
Lee E.H.,
Seo S.,
Kim D.C.,
Jung R.,
Kang B.S.,
Ahn S.E.,
Lee C. B.,
Seo D. H.,
Cha Y.K.,
Yoo I.K.,
Kim J.S.,
Park B. H.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700251
Subject(s) - materials science , reset (finance) , non volatile memory , voltage , non blocking i/o , resistor , optoelectronics , oxide , resistive random access memory , memory cell , series (stratigraphy) , state (computer science) , threshold voltage , high voltage , electrical engineering , transistor , computer science , engineering , metallurgy , paleontology , biochemistry , chemistry , algorithm , biology , financial economics , economics , catalysis
A memory cell consisting of a Pt/VO 2 /Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than V th of 0.6 V, the switch element reaches the on state and the cell can be accessed. Since reset and set voltages are higher than V th , information can be written by simply applying an appropriate voltage to a selected cell. By applying a voltage lower than V th to the other cells, we can keep the other cells in the off state and prevent interference between the selected cell and the others.