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Metal–Insulator Transition in Solution‐Processible Porphyrinic Field‐Effect Transistors
Author(s) -
Dhoot A. S.,
Aramaki S.,
Moses D.,
Heeger A. J.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700168
Subject(s) - materials science , field effect transistor , metal–insulator transition , transistor , threshold voltage , insulator (electricity) , copper , optoelectronics , metal , voltage , analytical chemistry (journal) , condensed matter physics , electrical engineering , metallurgy , chemistry , chromatography , physics , engineering
The charge carrier transport in solution‐processible copper tetrabenzoporphyrin field‐effect transistors (FETs) (see figure) is studied and characterized between room temperature and 4.2 K. The insulator‐to‐metal transition is reached at a carrier density of 3 × 10 12 cm –2 , approximately independent of the source–drain voltage.