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Amphoteric Phosphorus Doping for Stable p‐Type ZnO
Author(s) -
Allenic A.,
Guo W.,
Chen Y. B.,
Katz M. B.,
Zhao G. Y.,
Che Y.,
Hu Z. D.,
Liu B.,
Zhang S. B.,
Pan X. Q.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700083
Subject(s) - materials science , doping , epitaxy , phosphorus , conductivity , optoelectronics , condensed matter physics , chemical physics , nanotechnology , metallurgy , chemistry , layer (electronics) , physics
The role of dislocations in stable p‐type phosphorus‐doped ZnO epitaxial films is investigated. It is shown that good p‐type conductivity is always associated with a considerable increase in the density of dislocations, which can aid the formation of shallow complex acceptors and provide sinks for native donors.