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Nanostructure of the Interpenetrating Networks in Poly(3‐hexylthiophene)/fullerene Bulk Heterojunction Materials: Implications for Charge Transport
Author(s) -
Ma W.,
Gopinathan A.,
Heeger A. J.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200700019
Subject(s) - materials science , heterojunction , electric field , fullerene , charge carrier , nanostructure , charge (physics) , chemical physics , trapping , nanotechnology , field (mathematics) , optoelectronics , chemical engineering , physics , ecology , mathematics , quantum mechanics , pure mathematics , engineering , biology
The fractal dimension, chemical distance, and finally the effect of an applied electric field on the transport within the interpenetrating network of poly(3‐hexylthiophene)/fullerene bulk heterojunction materials are calculated. According to simulations, charge carriers travel along a pathway ~4 times longer than the regular Euclidean distance. In an applied electric field, the drift speed of charged carriers is reduced because of field‐induced trapping on the tortuous network.