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Inside Front Cover: Efficient Top‐Gate, Ambipolar, Light‐Emitting Field‐Effect Transistors Based on a Green‐Light‐Emitting Polyfluorene (Adv. Mater. 20/2006)
Author(s) -
Zaumseil J.,
Donley C. L.,
Kim J.S.,
Friend R. H.,
Sirringhaus H.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200690083
Subject(s) - ambipolar diffusion , materials science , optoelectronics , transistor , polyfluorene , schematic , electroluminescence , organic field effect transistor , light emission , field effect transistor , electron , voltage , nanotechnology , layer (electronics) , physics , electrical engineering , engineering , quantum mechanics
The inside cover shows light emission from within the channel of an ambipolar field‐effect transistor based on the green‐light‐emitting conjugated polymer F8BT in a bottom contact/top gate structure, as reported by Sirringhaus and co‐workers on p. 2708. It visually demonstrates the formation of separate electron and hole accumulation layers in ambipolar transistors and radiative recombination of charge carriers where the two layers meet (schematic), which is controlled by the applied voltages.