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Cover Picture: Improving Organic Thin‐Film Transistor Performance through Solvent‐Vapor Annealing of Solution‐Processable Triethylsilylethynyl Anthradithiophene (Adv. Mater. 13/2006)
Author(s) -
Dickey K. C.,
Anthony J. E.,
Loo Y.L.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200690053
Subject(s) - materials science , annealing (glass) , thin film transistor , transistor , fabrication , crystallization , optoelectronics , solvent , thin film , solution process , composite material , nanotechnology , chemical engineering , voltage , electrical engineering , organic chemistry , layer (electronics) , medicine , chemistry , alternative medicine , engineering , pathology
In work reported by Loo and co‐workers on p. 1721, the current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin‐film transistors are improved dramatically by a simple solvent‐vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor induces structural rearrangement and crystallization of TES ADT, as shown on the cover (lower section, before annealing, upper section, after). The annealing results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated.