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Inside Front Cover: Nanoscale Surface Morphology and Rectifying Behavior of a Bulk Single‐Crystal Organic Semiconductor (Adv. Mater. 12/2006)
Author(s) -
Menard E.,
Marchenko A.,
Podzorov V.,
Gershenson M. E.,
Fichou D.,
Rogers J. A.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200690050
Subject(s) - materials science , rubrene , scanning tunneling microscope , single crystal , organic semiconductor , semiconductor , nanoscopic scale , optoelectronics , nanotechnology , microscopy , optics , crystallography , physics , chemistry
Local surface measurements of rubrene single crystals reveal interesting insights on carrier‐transport mechanisms at the active interface of high‐performance field‐effect “air‐gap stamp” transistors, as reported by Fichou, Rogers, and co‐workers on p. 1552. Scanning tunneling microscopy (STM, tip shown schematically) images, combined with atomic force microscopy and X‐ray diffraction, reveal directly the position and orientation of individual molecules in the a–b plane. Local current–voltage curves recorded using STM in the dark and under illumination indicate a rectifying p‐type behavior.