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Cover Picture: Direction‐Dependent Homoepitaxial Growth of GaN Nanowires (Adv. Mater. 2/2006)
Author(s) -
Li H.,
Chin A. H.,
Sunkara M. K.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200690009
Subject(s) - nanowire , materials science , nanotechnology , prism , hexagonal crystal system , graphene , optoelectronics , crystallography , optics , chemistry , physics
GaN nanowires with vastly different morphologies depending upon their growth direction can be produced by direct nitridation and vapor transport of Ga in disassociated ammonia, report Sunkara and co‐workers on p. 216. Nanowires grown along the c ‐direction develop hexagonal‐prism island morphologies, while wires grown along the a ‐direction form uniform, belt‐shaped morphologies. A “ballistic” phenomenon involving the 1D transport of adatoms on the non‐polar surfaces of <0001> GaN nanowires is proposed to explain the prismatic island morphologies.