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Tunable and Predetermined Bandgap Emissions in Alloyed ZnS x Se 1– x Nanowires
Author(s) -
Wang M.,
Fei G. T.,
Zhang Y. G.,
Kong M. G.,
Zhang L. D.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602919
Subject(s) - nanowire , band gap , materials science , photoluminescence , information gap , nanotechnology , wide bandgap semiconductor , optoelectronics , computer science , computer network , bridging (networking)
Photoluminescence measurements show that the tunable bandgap emissions of the alloyed ZnS x Se 1– x nanowires shift continuously from 370 nm to 463 nm. According to the experimental results, predetermined bandgap emissions can be obtained via synthesizing alloyed ZnS x Se 1– x nanowires with the corresponding composition x .
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