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Role of Oxygen Vacancies in Cr‐Doped SrTiO 3 for Resistance‐Change Memory
Author(s) -
Janousch M.,
Meijer G. I.,
Staub U.,
Delley B.,
Karg S. F.,
Andreasson B. P.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602915
Subject(s) - materials science , doping , oxygen , bistability , vacancy defect , absorption (acoustics) , chemical physics , nanotechnology , optoelectronics , analytical chemistry (journal) , crystallography , chemistry , composite material , organic chemistry , chromatography
Transition metal oxides exhibiting a bistable resistance state are attractive for nonvolatile memory applications. The relevance of oxygen vacancies for the resistance‐change memory is investigated by X‐ray fluorescence (see figure), infrared microscopy, and X‐ray absorption spectroscopy using Cr‐doped SrTiO 3 as an example. The microscopic origin of resistance switching in this class of materials may be due to an oxygen‐vacancy drift occurring in close proximity to one of the electrodes.