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A New Scenario in Probe Local Oxidation: Transient Pressure‐Wave‐Assisted Ionic Spreading and Oxide Pattern Formation
Author(s) -
Xie X. N.,
Chung H. J.,
Liu Z. J.,
Yang S.W.,
Sow C. H.,
Wee A. T. S.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602837
Subject(s) - materials science , oxide , nanoscopic scale , ionic bonding , shock wave , transient (computer programming) , nanolithography , substrate (aquarium) , micrometer , silicon , nanotechnology , optoelectronics , optics , fabrication , ion , mechanics , chemistry , physics , alternative medicine , oceanography , medicine , organic chemistry , pathology , geology , computer science , metallurgy , operating system
A new mechanism based on transient shock‐wave‐assisted lateral ionic spreading and oxide growth is reported for atomic force microscopy probe local oxidation (see figure). Transitory high pressure waves generated in the nanoscopic tip–sample junction significantly extend the distribution of hydroxyl oxidants to facilitate micrometer‐scale disk‐oxide growth on a silicon substrate. The results show that shock propagation may be a general phenomenon in AFM nanolithography.