Premium
Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field‐Effect Transistors
Author(s) -
Mathijssen S. G. J.,
Cölle M.,
Gomes H.,
Smits E. C. P.,
de Boer B.,
McCulloch I.,
Bobbert P. A.,
de Leeuw D. M.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602798
Subject(s) - materials science , threshold voltage , transistor , activation energy , optoelectronics , trapping , amorphous silicon , negative bias temperature instability , organic semiconductor , degradation (telecommunications) , field effect transistor , amorphous solid , time constant , voltage , chemical physics , condensed matter physics , silicon , crystalline silicon , electrical engineering , chemistry , physics , crystallography , ecology , biology , engineering
The electrical instability of organic field‐effect transistors is investigated. We observe that the threshold‐voltage shift (see figure) shows a stretched‐ exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors reported so far. The constant activation energy supports charge trapping by residual water as the common origin.