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Low‐Temperature Epitaxial Growth of Vertical In 2 O 3 Nanowires on A ‐Plane Sapphire with Hexagonal Cross‐Section
Author(s) -
Chen C.J.,
Xu W.L.,
Chern M.Y.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602764
Subject(s) - materials science , epitaxy , nanowire , sapphire , hexagonal crystal system , cross section (physics) , photoluminescence , substrate (aquarium) , section (typography) , plane (geometry) , wavelength , condensed matter physics , optoelectronics , crystallography , nanotechnology , optics , geometry , layer (electronics) , laser , geology , chemistry , physics , mathematics , quantum mechanics , advertising , business , oceanography
Epitaxial growth of vertical In 2 O 3 (111) nanowires with hexagonal cross‐section on a‐plane sapphire is reported. The figure showing the vertical wires is viewed at 45° from the substrate normal. These wires taper gradually towards the tops and they start to bend near the tips. Because of the low‐temperature growth, the wires possess a new hexagonal symmetry and a shortest photoluminescence wavelength among those that have been reported for In 2 O 3 nanowires.