Low‐Temperature Epitaxial Growth of Vertical In 2 O 3  Nanowires on  A ‐Plane Sapphire with Hexagonal Cross‐Section | Zendy

Chen C.J. | Zendy; Xu W.L. | Zendy; Chern M.Y. | Zendy

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Low‐Temperature Epitaxial Growth of Vertical In 2 O 3 Nanowires on A ‐Plane Sapphire with Hexagonal Cross‐Section

Author(s) -

Chen C.J.,

Xu W.L.,

Chern M.Y.

Publication year - 2007

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200602764

Subject(s) - materials science , epitaxy , nanowire , sapphire , hexagonal crystal system , cross section (physics) , photoluminescence , substrate (aquarium) , section (typography) , plane (geometry) , wavelength , condensed matter physics , optoelectronics , crystallography , nanotechnology , optics , geometry , layer (electronics) , laser , geology , chemistry , physics , mathematics , quantum mechanics , advertising , business , oceanography

Epitaxial growth of vertical In 2 O 3 (111) nanowires with hexagonal cross‐section on a‐plane sapphire is reported. The figure showing the vertical wires is viewed at 45° from the substrate normal. These wires taper gradually towards the tops and they start to bend near the tips. Because of the low‐temperature growth, the wires possess a new hexagonal symmetry and a shortest photoluminescence wavelength among those that have been reported for In 2 O 3 nanowires.

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